Non-linear thermal resistance model for the simulation of high power GaN-based devices

Abstract We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance is able to account for effects at low power, decrease conductance semiconductors when lattice temperature increases, makes necessary use dependent models. Moreover, order correctly steep increase GaN devices high temperature, where commonly used models fail, we propose non-linear model which, included an electro-thermal Monte Carlo simulator, reproduce strongly behavior observed experiments DC power levels. The accuracy proposed has been confirmed by means comparison with pulsed and measurements made specifically fabricated doped GaN, reach levels above 150 W mm ?1 biases below 30 V.